Ka-band self-biased monolithic gaas pHEMT low noise amplifier

A 32 -40 GHz monolithic low noise three stage amplifier has been developed using an GaAs/InGaAs/AlGaAs pseudomorphic HEMT with a gate length of 0.15um. In order to reduce the chip size and circuit's complexity, self-Biased technology has been applied. The chip only needs two DC Pads. Resistive matching technologies have been used to enhance the electrical specifications like return loss and gain flatness. The simulated data shows better than 2.5 dB of noise figure with an associated gain of more than 20dB over the frequency band of 32-40 GHz. Additionaly, the input/output return losses is better than 14.8 dB and the P1dBm more than 9.8dBm. The layout size is 2.1 × 0.8 mm.