Separation of intrinsic and parasitic MOSFET parameters using a multiple built-in Kelvin test structure

A new MOSFET test structure built in multiple Kelvin patterns is used to evaluate scaled-down MOSFET characteristics through separation of intrinsic and parasitic parameters. Transistor characteristics and contact resistance of individual MOSFETs are simultaneously measured to clarify the direct correlation between fluctuation of MOSFET characteristics and that of parasitic contact resistance. MOSFET performance without parasitic interconnect resistance can be also measured to define intrinsic current drivability in a MOSFET fully scaled-down to less than sub-half-micrometers dimensions.