Temperature dependence of switching performance in IGBT circuits and its compact modeling

We have developed the compact IGBT model HiSIM-IGBT, based on a complete solution for the potential distribution, which connects the surface-potential of the MOS-FET part to the bipolar part by an iterative procedure in a self-consistent way. Here we report the self-heating extension of HiSIM-IGBT, a compact model for power diode including the reverse recovery effect and the model application to accurate prediction of experimental switching characteristics.