0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory

Self-boost-programming for ferroelectric-NAND (Fe-NAND) flash memory was investigated by using a miniature memory cell array, which could reduce bit-line voltages for programming. As the best performance, 0.5V bit-line-voltage programming with 10μs-pulse width was successfully demonstrated. This study indicated that the Fe-NAND flash memory can be operated by much lower power consumption than that of a conventional floating gate (FG-) NAND.