Study on solid phase epitaxy formed embedded SiC by tilted cluster carbon ion implantation

Several approaches of solid phase epitaxy (SPE) formed embedded SiC (eSiC) scheme have been investigated on 28 nm node technology. The single SPE thermal process by LSA only with post S/D scheme is reported to accommodate high carbon concentration as well as low sheet resistance in this work. Cluster carbon with tilted angle implantation is designed to further simplify process and increase channel strain. By this tilted cluster-carbon implantation approach, a 69.6% improvement on device mobility is achieved. Moreover, the device mobility can be further improved by combining vertical and optimized tilted cluster carbon implantation as predicted by simulation.