Detailed high-k/In0.53Ga0.47As interface understanding to enable improved In0.53Ga0.47As gate stack quality

Thermal stability of the high-k/In
_0.53
Ga
_0.47
As interface has been analyzed by both physical and electrical methods for the first time. It has been found that As-O and In-O bonds decompose and Ga-O bonds form above 400°C, as shown by XPS and corroborated by TEM, SIMS and EDX. Electrically, this interface decomposition resulted in increased frequency dispersion (accumulation), C-V shift, and mobility degradation. These results provide additional insights into improving the III-V/high-k interface as a candidate for 11nm CMOS technology.