High reliability, high performance 1300 nm, 1480 nm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers

Summary form only given. Strained-layer quantum well lasers have been demonstrated to have low threshold current and high differential quantum efficiency. In this paper, we describe low threshold current and high temperature operations of 1300 nm lasers for fiber in the loop application and extremely high power 1480 nm lasers for pumping sources of Er-doped fiber amplifiers. Reliability tests of these lasers are also described.