The impact of stochastic dopant and interconnect distributions on gigascale integration

Opportunities for GSI are governed by a hierarchy of physical limits whose five levels can be codified as: fundamental, material, device, circuit, and system. This distinctive methodology is extended here by elucidating the impact on GSI of random dopant atom placement in the channel region of a MOSFET and of interconnect distributions in random logic networks in context with projected advances in device and circuit techniques.