Characterization of bitline stress effects on flash cell after program/erase cycle

The impact of degradation of Flash memory cell characteristics caused by bitline stress during program/erase cycling is investigated considering the accentuated generation rate of negative oxide trap charges and interface-states. A special emphasis is focused on the observation of a significant amount of hole traps and their movement into the channel region. These oxide damages dramatically alter the device characteristics, and initiate severe read-disturb issue.