Silicon MCM-D technology for RF integration

The thin film implementation of Multichip Module technology has been identified as a useful platform for the integration of GaAs MMICs and silicon device technologies for microwave applications where performance, size and weight are critical factors. The ability of the MCM-D technology to provide controlled impedance, microstrip structures and integrated thin film passive components with useful performances in the microwave frequency regime has now been demonstrated. This paper describes the 3 layer metallisation MCM-D technology developed by GPS for RF integration applications and reviews the range of integrated passive resistor, capacitor and inductor components that may be defined within the substrate structure. Representative equivalent circuit models for these components are discussed. Examples of novel multilayer microwave components that may be realised in this MCM-D technology, including multilayers spiral inductors and transmission line transformers, are also cited. The design route for RF module simulation and design is outlined. Examples of typical RF MCM-D functional block designs are presented and their performance illustrated. Results are presented for MCM filters and for a Low Noise Amplifier (LNA) block designed for the HIPERLAN band at 5.2 GHz. Examples of more complex, mixed technology RF MCM designs are also presented, including a 2.1 GHz VCO module and a complete RF front end module solution for the HIPERLAN band at 5.2 GHz.