Programming voltage reduction in phase change cells with conventional structure

A new operation strategy has been proposed to reduce the programming voltage in RESET operation of phase change memory (PCM). The amorphous state generated after first pulse would restrict the current flowing through the phase change materials, increasing the heat efficiency. Thus, the amorphous state in the second pulse would increase. The accumulative amorphous state would cover the bottom electrode finally. Thus, RESET operation commences successfully. In new RESET operation strategy, the voltage pulse could consist of small amplitude and width voltage pulses (1V/35ns). The programming voltage is reduced with conventional structure, reducing costing on refining cell structure and power consumption.