Analytical model for hole mobility in (001)-biaxially strained Si

The strained Si technology is a research emphasis in the modern microelectronic field. Hole mobility is an important physical parameter in strained Si materials. In this paper, an analytical model of the hole mobility of (001)-biaxially tensile strained-Si material grown on relaxed Si
1−x
Ge
x
(0≤x≤0.4) substrates, as a function of strain, doping concentration and different orientations was obtained. The quantized models can provide valuable references to the understanding on strained Si materials and the research on physical properties of devices.