High-Speed Selector–Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs

This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped n
⁺
-InP layer inserted at the base-collector junction. Molecular-beam-epitaxy-grown abrupt pulse-doped InP-InGaAs-InP DHBTs ensure very high current gains of ~ 90, low saturation voltages of less than 1 V, and high cutoff frequencies of ~ 350 GHz. Using this technology, a compact high-speed high-voltage multiplexer-driver integrated circuit (IC) suitable for high-speed signal processing and communication systems has been designed and fabricated. The IC has successfully been measured at 112 Gb/s with very clear eye openings of up to 2
V
_pp
with a power consumption of 2 W.