Modeling and Characterization of the on-Resistance in 4H-SiC Power BJTs

The on-resistance of silicon carbide bipolar transistors is characterized and simulated. Output characteristics are compared at different base currents and different temperatures in order to validate the physical model parameters. A good agreement is obtained, and the key factors, which limit the improvement of
R
_ON
, are identified. Surface recombination and material quality play an important role in improving device performances, but the device design is also crucial. Based on simulation results, a design that can enhance the conductivity modulation in the lowly doped drift region is proposed. By increasing the base doping in the extrinsic region, it is possible to meet the requirements of having low voltage drop, high current density, and satisfactory forced current gain. According to simulation results, if the doping is 5 ×10
¹⁸
cm
^-3
, it is possible to conduct 200 A/cm
²
at
V
_CE
= 1 V by having a forced current gain of about 8, which represents a large improvement, compared with the simulated value of only one in the standard design.