Semi-Insulating Buried Heterostructure 1.55micrometer InGaAlAs Electroabsorption Modulated Laser with 60GHz Bandwidth

We demonstrate an integrated laser-modulator based on AlGaInAs Single Active Layer and Semi-Insulating iron-doped InP burying technology. Components with very short 50micrometer EAM section show up to 60GHz bandwidth together with Static Extinction Ratio of 18dB for the first time.