High-temperature perspectives of UTB SOI MOSFETs

In this paper, we analyze, for the first time to our best knowledge, the high-temperature perspectives of Ultra-thin body (UTB) SOI MOSFETs. High-temperature behavior of threshold voltage, subthreshold slope, transconductance maximum and on-current is analyzed in details through measurements and 2D simulations. Particular attention is paid to the effect of buried oxide (BOX) and Si film thicknesses as well as channel doping on the degradation of main device parameters over the temperature range.