Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

The breakdown (BD) voltage statistics of Al
₂
O
₃
/HfO
₂
nanolaminate (NL) multilayer dielectrics fabricated by atomic layer deposition (ALD) are nmodeled within the percolation theory. Moreover, the nanolaminate BD properties are predicted from the BD statistics of the separate materials, thus providing a reliable BD design framework for NLs. Comparison with experimental data suggests that the electric field in each of the NL layers, rather than the total gate voltage, is the variable that controls the BD statistics.