Specific features of fluorination of silicon surface region by RIE in r.f. CF4 plasma — novel method of improving electrical properties of thin PECVD silicon dioxide films

In this study, the comparison of methods of improving electro-physical properties of silicon dioxide (SiO
₂
) by means of silicon substrates fluorination in CF
₄
in PECVD and RIE reactors, prior to oxide deposition, has been performed. The results proved that, in general, fluorination in RIE is superior to the fluorination in PECVD reactor. The observed effects have been referred to the obtained changes in the electrical properties, resulting from both fluorination methods. As a result of this study, it has been proved, that properties change is fluorine concentration dependent.