A New Model for Two-Dimensional Electrical-Field-Dependent $V_{\rm th}$ Instability of pMOSFETs With Ultrathin DPN Gate Dielectrics

The 2-D electrical-field-dependent hot-hole-related negative-bias temperature instability (HH-NBTI) behaviors of pMOSFETs with 1.7-nm decoupled-plasma-nitridation oxynitride dielectrics are investigated. The lateral-channel electric-field-induced turnaround HH-NBTI degradation that is associated with the enhanced breaking effect of the interfacial Si-H bonds at the Si interface is demonstrated. For the first time, the lateral-electric-field-dependent activation energy of ≡ Si- H bond dissociation is presented. A new model taking into account the 2-D electric field effects is proposed to depict the HH-NBTI behaviors related to the lateral- and vertical-channel electric fields. The proposed model is verified by the experimental data.