Gain estimation of RT-APD devices by means of TCAD numerical simulations

The design of Reach-Through Avalanche Photodiodes (RT-APD) for medium energy X-ray detection requires a previous optimization to guarantee elevated gain at the required operation conditions. A simple methodology to estimate the gain in RT-APD devices by using TCAD numerical simulations is proposed in this work. This technique offers the possibility to predict the gain in RT-APDs as a function of the most relevant design considerations.