A compact flip chip high power amplifier module for mobile applications

A flip chip high power amplifier is developed using Bi-FET (HBT+E/D-PHEMT) technology for emerging mobile applications. Cu-pillar bumps with high conductivity were developed for the flip chip process. This flip chip die consists of a wideband 2.3-2.7 GHz high-power, high-linearity, high-efficiency PA with an on-chip regulator, PAON logic, temperature compensation, dynamic linearization bias, and a detector circuit. It shows good performance over voltage and over temperature in a 3.3×3.3×0.8 mm laminate module using BT material. This PAM includes PA input and output matching, DC blocking caps, bias chokes, and bypass caps. No external parts are needed.