A 5.9 GHz–8.5 GHz 20 Watts GaN HEMT

A 20 Watts GaN high electron mobility transistor (HEMT) has been developed for C-band radio applications. The device consists of a single die of 0.35 μm-gate GaN HEMT of 12 mm gate periphery together with input and output 2-stage impedance transformers into a conventional package. The developed GaN HEMT provides 20 watts output power and 40% power added efficiency over 5.9 GHz to 8.5 GHz with small signal gain of 13.5 dB.