Simulation and comparison studies of Silicon Carbide and silicon power devices

SiC VDMOSFETs show great promise in high power/temperature operations when compared with their Si counterparts. The SiC MOSFETs have been compared with Si Double Diffused MOSFETs having the same physical dimensions. Si Double Diffused MOSFETs are designed and optimized through process and device simulations. The performance advantages like those in blocking voltage and on-resistance of the SiC MOSFET has been shown through the simulations. SPICE parameters of both Si and SiC devices have been extracted and the results are compared. The overall system advantages gained from the implementation of SiC on power devices has been demonstrated.