A 1 Mbit EEPROM with MONOS memory cell for semiconductor disk application

The authors describe a 5-V-only 1-Mb EEPROM for semiconductor disk application with a newly developed MONOS memory cell and CMOS periphery circuits. The cell size is reducer to be as small as that of UV-erasable EPROMs, and high-speed data programming of a 140 ms/chip (1.1 μs/B equivalent) is realized by adopting block erase mode and page write mode