Simulation of intrinsic bipolar transistor mechanisms for future capacitor-less eDRAM on bulk substrate

Embedded DRAM technology is undergoing a radical evolution. With size reduction, capacity shrink seems to be a complex obstacle to overcome. Alternative memory cells have been proposed to respond to this problem; capacitorless eDRAM is one of most promising solution. In this paper, after reviewing the current status on eDRAM market and recent evolution of eDRAM trends we study the feasibility of an innovative capacitorless eDRAM based on intrinsic bipolar transistor on bulk substrate.