Mechanism of Long-Channel Drain-Induced Barrier Lowering in Halo MOSFETs

It is well known that, in a halo-implanted metal-oxide-semiconductor field-effect transistor, the application of the drain voltage lowers the threshold voltage even in a long-channel device. This phenomenon is known as the long-channel drain-induced barrier lowering (LDIBL) or the drain-induced threshold-voltage shift (DITS). In this paper, we will investigate the physical origin of this effect and will show that the root cause has not been previously identified properly. We will identify the physical phenomenon behind the LDIBL/DITS and present an analytic model. The proposed approach is validated against both the device simulation and measurement.