Modeling Inter-Device Leakage in 90 nm Bulk CMOS Devices

We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the
$I_{d} -V_{gs}$
characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the model against technological parameters such as doping concentration, field-oxide thickness, and geometry. When used in conjunction with the closed-form expressions for the surface potential, the analytical models for fixed oxide charge and interface trap density enables accurate modeling of radiation-induced degradation of the FOXFET
$I_{d} -V_{gs}$
characteristics allowing the incorporation of TID into surface potential based compact models.