1.14 /spl mu/m strained-layer InGaAs-GaAs-InGaP SQW lasers on ternary In/sub 0.03/Ga/sub 0.97/As substrates by metalorganic chemical vapor deposition

In this talk, we present the design and device results of strained-layer InGaAs-GaAs-InGaP separate confinement heterostructure lasers emitting at 1.14 /spl mu/m fabricated on a ternary In/sub 0.03/Ga/sub 0.97/As substrate. The InGaAs substrate used for the devices in this talk was measured by FTIR spectroscopy to have an indium molar percent of 3.03%.