Performance enhancement of AlGaN/GaN based UV laser diode for short-λ optical communication

Qualitative optimization of the InAlN as electron-block layer (EBL) has been studied. Analytical comparisons of AlGaN and modified InAlN as EBLs have been performed. Using 2D simulation, significant improvement in the emission intensity of the designed structures with In
_0.18
Al
_0.82
N EBLs compared to similar with non-EBL and Al
_0.8
Ga
_0.82
N as EBL is observed. This enhancement can be attributed to the fact that modified EBL is more efficient in electron confinement and reduces the efficiency droop caused by carrier spillover into p-region.