A novel structure of delta-strained quantum well for polarization insensitive semiconductor devices at 1.55 /spl mu/m

This report gives the preliminary results of using a three monolayer GaAs layer in a lattice matched InGaAs quantum well. Referring to earlier work on thin strained layers, we choose to call this a delta-strained quantum well structure. One of the important advantages of this novel structure is the ease of MBE growth.