Ground plane SOI MOSFET based SRAM with consideration of process variation

In this paper, the characteristics of static random access memory (SRAM) cells based on three silicon-on-insulator (SOI) device structures are studied using device simulations. The comparative study, which is performed in a 32nm standard CMOS technology, includes read static noise margin (read SNM), read current, and standby power. The structures include SOI with ground plane in substrate (SOI-GPS), SOI with ground plane in buried oxide (SOI-GPB), and SOI without ground plane (SOI-WGP). In addition, the variations of the SRAM characteristics due to channel length and thin-film thickness variations are investigated. The results show that the SOI-GPS structure is more resistant against the process variations when compared to the other two structures.