High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

A high performance 22/20nm CMOS bulk FinFET achieves the best in-class N/P I
on
values of 1200/1100 µA/µm for I
off
=100nA/µm at 1V. Excellent device electrostatic control is demonstrated for gate length (L
gate
) down to 20nm. Dual-Epitaxy and multiple stressors are essential to boost the device performance. Dual workfunction (WF) with an advanced High-K/Metal gate (HK/MG) stack is deployed in an integration-friendly CMOS process flow. This dual-WF approach provides excellent V
th
roll-off immunity in the short-channel regime that allows properly positioning the long-channel device V
th
. Enhanced 193nm immersion lithography has enabled the stringent requirements of the 22/20nm ground rules. Reliability of our advanced HK/MG stack is promising. Excellent SRAM static noise margin at 0.45V is reported.