Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

High performance metal-gate/high-κ/Ge n-MOSFETs are reached with low 73 Ω/sq sheet resistance (R
_s
), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm
²
/Vs high-field (1 MV/cm) mobility and low 37 mV ΔV
_t
PBTI (85°C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n
⁺
/p junction and 10X better I
_ON
/I
_OFF
.