Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages

We report the first demonstration of a super-steep subthreshold slope (SS) (the smallest ever reported experimentally) with ultra-thin BOX (UTBOX) FDSOI standard CMOS transistors. Record steep SS of 72μV/dec for L
_g
=25nm and 58μV/dec for L
_g
=55nm at room temperature are achieved with low voltages. The device also exhibits high ON-state current (~100μA/μm), as compared to other devices from this class. As a result, I
_ON
/I
_OFF
ratio of 10
⁸
is realized with 0.5V gate swing for L
_g
=55nm MOSFETs. The excellent reliability is also demonstrated.