32nm high-density high-speed T-RAM embedded memory technology

Thyristor Random Access Memory (T-RAM) is an ideal candidate for application as an embedded memory due to its substantially better density vs. performance tradeoff and logic process compatibility. T-RAM memory embedded in a 32nm logic process with read and write times of 1ns and a bit fail rate less than 0.5ppm is reported for the first time. T-RAM memory cell median read current of 250μA/cell at 1.2V with an I
_on
/I
_off
current ratio of more than 10
⁸
is demonstrated at 105°C. Robust margins to dynamic disturb due to the access (read/write) of neighboring bits in the memory array have also been verified.