High-mobility Ge nano-stripes for next generation Si-CMOS

Research and development for new semiconductor devices which enable ultrahigh speed operation and ultralow power dissipation are strongly required to overcome the scaling limit of the transistor performance. In line with this, Si-based heterostructure technologies have been widely developed. Recently, we have developed SiGe mixing triggered liquid-phase epitaxy (LPE). This achieves high-mobility Ge single crystals on insulating substrates [1]. The present paper reviews our recent progress in this novel growth technique.