2.2-inch QQVGA AMOLED driven by low temperature top-gate a-IGZO TFT

We investigated amorphous In
₂
O
₃
-Ga
₂
O
₃
-ZnO (a-IGZO) oxide semiconductor material as the active layer of TFTs. The top gate a-IGZO TFTs by using a conventional photolithography technique have good performance without an additional post annealing process. A 2.2- inch QQVGA AMOLED display was demonstrated by using a-IGZO TFT fabricated on glass substrate. The maximum process temperature is 200°C.