Analysis of Transconductance $(g_{m})$ in Schottky-Barrier MOSFETs

This paper experimentally investigates the unique behavior of transconductance
$(g_{m})$
in the Schottky-barrier metal–oxide–semiconductor field-effect transistors (SB-MOSFETs) with various silicide materials. When the Schottky-barrier height (SBH) or a scaling parameter is not properly optimized, a peculiar shape of
$g_{m}$
is observed. Thus,
$g_{m}$
can be used as a novel metric that exhibits the transition of the carrier injection mechanisms from a thermionic emission (TE) to thermally assisted tunneling (TU) in the SB-MOSFETs. When the local maximum point of
$g_{m}$
is observed, it can be expected that an incomplete transition occurs between TE and TU in SB-MOSFETs. When a dopant-segregation (DS) technique is implemented in the SB-MOSFETs, however, the carrier injection efficiency from the source to the channel is significantly improved, although the SBH is not minimized. As a consequence, the peculiar shape of the
$g_{m}$
disappears, i.e., a complete transition from TE to TU can be enabled by the DS technique.