A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier

We have developed W-band high-power monolithic microwave integrated circuit (MMIC) amplifiers using passivated 0.15 μm gate length InGaAs/InAlAs/InP HEMT's. A 640 μm single-stage MMIC amplifier demonstrated an output power of 130 mW with 13% power-added efficiency and 4 dB associated gain at 94 GHz. This result represents the best output power to date measured from a single fixtured InP-based HEMT MMIC at this frequency.