Analytical model for intrinsic carrier concentration in (101)-biaxially strained Si

By analyzing the band structure of strained Si/(101) Si
1−x
Ge
x
, the relationship of whose intrinsic carrier concentration (ni) between Ge fraction (x) and temperature were obtained. And then, the model for the intrinsic carrier concentration of strained Si/(101) Si
1−x
Ge
x
was established. The results show that increases significantly due to the effect of the strain in strained Si/(101)Si
1−x
Ge
x
, the density of state effective masses decrease with increasing Ge fraction (x), and is directly proportional to temperature.