Deep groove etching for partial reflectors in InP-based monolithically integrated photonic devices

Dry etching process of InP is developed using inductively coupled plasma (ICP) with halogen and hydrocarbon based gas mixture. This recipe is optimized for deep groove etching requiring a high anisotropy and smooth surface morphology in integrated photonic device fabrication. A laser with good performance is fabricated using the etched groove as a partial reflector.