High-Performance 1-$\mu\hbox{m}$ GaN n-MOSFET With MgO/MgO–$\hbox{TiO}_{2}$ Stacked Gate Dielectrics

Gate length of 1-μm enhancement-mode n-channel GaN MOSFET with MgO and hybrid MgO-TiO
₂
stacked gate dielectrics were characterized. The leakage current of a stacked MgO and hybrid MgO-TiO
₂
MOS capacitor can be as low as 6.2 × 10
^-9
and 6.9 × 10
^-9
A/cm
²
at ±1-V bias, respectively. Through a self-aligned process, superior I
_D
-V
_D
and I
_D
-V
_G
electrical characteristics of a MOSFET were obtained. The maximum drain current is 3.69 × 10
^-5
A/μm at a gate voltage V
_g
of 8 V and a drain voltage V
_D
of 10 V. The subthreshold swing is 342 mV/dec, and the I
_ON
/I
_OFF
is 5.7 × 10
⁴
.