Collector region design and optimization in Horizontal Current Bipolar Transistor (HCBT)

Three different types of the n-collector region of Horizontal Current Bipolar Transistor (HCBT) are analyzed and compared. The optimum n-collector profile suppresses the charge sharing effect between the intrinsic and extrinsic base regions, resulting in the uniform base width and electric field in the intrinsic transistor. This implies a maximum BV
_CEO
and an optimum f
_T
BV
_CEO
product among compared structures. The HCBT with a selectively implanted collector (SIC) is introduced and examined. It reduces R
_C
and increases f
_T
comparing to the other n-collector designs. The analyses give the guidelines for the optimum HCBT design for targeted applications.