Noise modeling of advanced technology high speed SiGe HBTs

Noise parameters of SiGe HBTs fabricated in different technologies were measured in the 1-26 GHz frequency range. The standard dc, ac characteristics and noise parameters were compared to the compact model HICUM. Very good agreement was obtained for all technologies. The noise parameters were simulated with a new systematic noise correlation model, implemented and realized in HICUM via Verilog-A. The model was verified up to 500 GHz against TCAD simulations and Boltzman Transport equation solution method. The compact realization of the new noise correlation model is applicable to all SPICE-like circuit simulators.