A novel hybrid-anode AlGaN/GaN field-effect rectifier with low operation voltage

A novel hybrid-anode AlGaN/GaN field-effect rectifier (HA-FER) with low operation voltage has been proposed. The rectifier features a Schottky gate controlled channel between the cathode and anode, by integrating the recessed-Schottky gate and anode Ohmic contact together (hybrid-anode). The turn-on voltage of HA-FER is determined by the threshold voltage of the channel instead of the Schottky barrier, which leads to low operation voltage. As a result, the turn-on voltage of the HA-FER is 0.2 V in comparison with 0.8 V of the conventional Schottky barrier diodes (SBD). The HA-FER shows no degradation in blocking capability.