Remarkable improvement in switching ratio of ReRAM using In/poly-Fe2O3/Nb-SrTiO3 devices

Typical bipolar resistive switching behavior are observed in the In/poly-Fe
₂
O
₃
/Nb-SrTiO
₃
(Nb-STO) devices. Rectifying I-V characteristics along with switching ratio significantly related to the polarity of read voltage have been found. A negative read voltage remarkable enhances the switching ratio to 10
⁷
comparing with 10
²
for the positive polarity, which demonstrates an efficient way to improve ReRAM's switching characteristic. Furthermore, the cycle-to-cycle uniformity, set&reset current, resistance distribution and retention time have been measured that exhibits good device performance for promising applications.