La2O3 insulators prepared by ALD using La(iPrCp)3 source: Self-limiting growth conditions and electrical properties

La
₂
O
₃
insulators have been prepared by ALD using La(
ⁱ
PrCp)
₃
and H
₂
O as the source materials. We identified two necessary conditions to achieve the self-limiting growth: temperatures lower than 200°C and extremely long purging after H
₂
O pulses. La
₂
O
₃
insulators annealed at 500°C showed good MOS properties with no hysteresis and small flat-band voltage shift. Comparisons to the have La
₂
O
₃
films prepared by electron-beam evaporation indicated that the ALD process needs further optimization especially to improve the k value (presently ~12) as well as the leakage suppression.