Carrier transport in (110) n- and p-MOSFETs

In this paper, electron mobility (μ<;sub>e<;/sub>) and hole mobility (μ<;sub>h<;/sub>) of (110) nFETs and pFETs are studied, respectively. It is demonstrated that, because of the non-parabolicity along <;110>, the conventional effective mass model is insufficient to accurately evaluate the quantum confinement effects in (110) nFETs..