Investigation of power MOSFET switching at cryogenic temperatures

Operation of power MOSFETs (metal oxide semiconductor field effect transistor) at cryogenic temperatures significantly reduces conduction losses and increases power handling capability. High voltage (1000 V+) devices exhibit the largest reduction of conduction losses. The breakdown voltage of the devices is reduced by about 20% when cooled from 75/spl deg/F down to -319/spl deg/F.