Optimized calculation of the thickness of emission layer of NEA GaN semitransparent UV-photocathode

The thickness of emission layer Te has the significant influence on quantum efficiency (QE) of NEA GaN semitransparent UV-photocathode. According to W.E.Spicer's photoemission "3-step model" theory, the whole process is described as photoelectron excitation, transportation from bulk to surface and escape to the vacuum by traversing surface barrier. The first two steps have taken place in emission layer.